STM4431 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – P -Channel E nhancement Mode F ield E ffect Transistor

S TM4431
S amHop Microelectronics C orp.
P reliminary May.21,2004
P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
F E AT UR E S
5
VDS S
ID
R DS (ON) ( m W ) Max
S uper high dense cell design for low R DS(ON).
45 @ VGS = -10V
R ugged and reliable.
-30V -5.3A
60 @ VGS = -4.5V
S urface Mount P ackage.
DDDD
8
7
6
5
S O-8
1
1
2
34
S SS G
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
30
V
Gate-S ource Voltage
VGS
20
V
Drain C urrent-C ontinuous ^a @ TJ=125 C
ID
-5.3
A
-P ulsed ^b
IDM
-26.5
A
Drain-S ource Diode Forward C urrent ^a
IS
-1.7
A
Maximum P ower Dissipation ^a
PD
2.5
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
50
C /W
1