STM301N Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STM301N
Ver1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
100V
5.2A
48 @ VGS=10V
56 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
S O-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TA=25°C
TA=70°C
I_DM
-Pulsed ^b
E_AS
Sigle Pulse Avalanche Energy ^d
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
100
±20
5.2
4.2
28
156
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
Jan,25,2010
www.samhop.com.tw