STG8810A Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
STG8810A
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.3
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
14.5 @ VGS=4.5V
15.0 @ VGS=4.0V
20V
7A
17.0 @ VGS=3.7V
19.5 @ VGS=3.1V
23.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD HBM > 2KV.
D1/D2
S1
S1
G1
TS S OP
1
8
2
7
3
6
4
5
(TOP VIE W)
D1/D2
S2
S2
G2
D1
D2
G1
G2
S1
S2
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TA=25°C
TA=70°C
I_DM
-Pulsed ^b
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
20
±12
7.0
5.6
80
2.0
1.28
-55 to 150
62.5
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,02,2014
www.samhop.com.tw