STG8203 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Dual N-Channel Enhancement Mode Field Effect Transistor

S TG8203
S amHop Microelectronics C orp.
J un.06 2005 ver1.2
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m ) Max
27 @ VGS = 4.0V
20V
5A
42 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
TS S OP
1
2
8
7
3
6
4
5
(TOP VIE W)
( 1 )_D1
D2( 8 )
( 4 )_G1
( 2,3 )S 1
G2( 5 )
S 2( 6,7 )
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
10
V
Drain C urrent-C ontinuous ^a @ TC=25 C
ID
5
A
-P ulsed ^b
IDM
25
A
Drain-S ource Diode Forward C urrent ^a
IS
2
A
Maximum P ower Dissipation ^a
PD
1.5
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
85
C /W
1