STG2017 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode Field Effect Transistor

S amHop Microelectronics C orp.
S TG2017
May,18 2005
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( mW ) Max
20V
7A
20 @ VGS = 4.5V
28 @ VGS = 2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
D1/D2
S1
S1
G1
TS S OP
1
8
2
7
3
6
4
5
(TOP VIE W)
D1/D2
S2
S2
G2
D1
D2
G1
G2
S1
S2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
10
V
Drain C urrent-C ontinuous ^a @ TJ=25 C
ID
7
A
-P ulsed ^b
IDM
28
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7
A
Maximum P ower Dissipation ^a
PD
1.5
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
85
C /W
1