STF8810 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
STF8810
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.3
PRODUCT SUMMARY
VDSS
20V
ID
8.0A
RDS(ON) (mΩ) Max
16.0 @ VGS=4.5V
17.0 @ VGS=4.0V
18.0 @ VGS=3.7V
21.0 @ VGS=3.1V
27.5 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G1
S1
S1
PIN 1
D1/D2
G2
S2
S2
TDFN 2X3
(Bottom view)
G1 3
S1 2
S1 1
Bottom Drain Contact
4 G2
5 S2
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol
V_DS
V_GS
I_D
I_DM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous ^c
-Pulsed ^{a c}
TA=25°C
T_A=70°C
P_D
Maximum Power Dissipation
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
20
±12
8.0
6.4
48
1.56
1.00
-55 to 150
80
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,18,2014
www.samhop.com.tw