STF8234 Datasheet, PDF (1/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STF8234
Ver 1.0
PRODUCT SUMMARY
VDSS
20V
ID
RDS(ON) (mΩ) Max
5.2 @ VGS=4.5V
5.3 @ VGS=4.0V
14A
5.4 @ VGS=3.7V
5.9 @ VGS=3.1V
6.8 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PIN 1
G
S
S
D
D
D
TDFN 2X3
(Bottom view)
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
I_DM
-Pulsed ^b
TA=25°C
T_A=70°C
P_D
Maximum Power Dissipation ^a
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
20
±12
14
11.2
80
1.8
1.1
-55 to 150
70
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Nov,09,2012
www.samhop.com.tw