STF8209A Datasheet, PDF (1/6 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

STF8209A ^Gree
Pro
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
20V
ID
6.5A
RDS(ON) (mΩ) Max
22.0 @ VGS=4.5V
23.0 @ VGS=4.0V
24.0 @ VGS=3.7V
27.5 @ VGS=3.1V
33.5 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G1
S1
S1
PIN 1
D1/D2
(Bottom view)
G2
S2
S2
TDFN 2X5
G1 3
S1 2
S1 1
Bottom Drain Contact
4 G2
5 S2
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol
V_DS
V_GS
I_D
I_DM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous ^a
-Pulsed ^b
TA=25°C
T_A=70°C
P_D
Maximum Power Dissipation ^a
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
20
±12
6.5
5.2
40
1.67
1.07
-55 to 150
75
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Jul,06,2011
www.samhop.com.tw