STF2458 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
STF2458
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS
24V
ID
RDS(ON) (mΩ) Max
9.5 @ VGS=4.5V
10.2 @ VGS=4.0V
10A 10.4 @ VGS=3.7V
11.5 @ VGS=3.1V
14.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
G1
S1
S1
PIN 1
D1/D2
G2
S2
S2
TDFN 2X3
(Bottom view)
G1 3
S1 2
S1 1
Bottom Drain Contact
4 G2
5 S2
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
I_DM
-Pulsed ^b
TA=25°C
T_A=70°C
P_D
Maximum Power Dissipation ^a
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
24
±12
10.0
8.0
60
1.56
1.00
-55 to 150
80
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Sep,24,2013
www.samhop.com.tw