STF06N20 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STP06N20
STF06N20
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
1.1 @ VGS=10V
200V
5A
1.3 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
STP SERIES
TO-220
GDS
STF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS (T_C=25^°C unless otherwise noted⁾
Symbol Parameter
STP06N20 STF06N20
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
200
±20
±20
I_D
Drain Current-Continuous ^a
TC=25°C
TC=100°C
5
5
3.5
3.5
I_DM
-Pulsed ^a
15
15
P_D
Maximum Power Dissipation
T_C=25°C
TC=100°C
75
25
37.5
12.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
THERMAL CHARACTERISTICS
R _JC
R _JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2
6
62.5
62.5
Units
V
V
A
A
A
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Oct,28,2013
www.samhop.com.tw