STA6611 Datasheet, PDF (1/10 Pages) SamHop Microelectronics Corp. – Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

STA6611
SamHop Microelectronics Corp.
Nov. 22, 2006
Dual Enhancement Mode Field Effect Transistor ( N and P Channel)
PRODUCT SUMMARY (N-Channel)
VDSS
30V
ID
RDS(ON) ( m Ω ) Max
23 @ VGS = 10V
7.6A
30 @ VGS = 4.5V
PRODUCT SUMMARY (P-Channel)
VDSS
-30V
ID
-6.6A
RDS(ON) ( m Ω ) Max
35 @ VGS = -10V
55 @ VGS = -4.5V
D1 D1 D2 D2
8765
P DIP -8
1
1234
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol ^{N-Channel P-Channel} Unit
Drain-S ource Voltage
VDS
30
-30
V
Gate-S ource Voltage
VGS
20
20
V
a
Drain C urrent-C ontinuous @ Ta
25 C
ID
7.6 - 6.6
A
70 C
6
5.3
A
-P ulsed ^b
IDM
30
28
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7
-1.7
A
Ta= 25 C
3
Maximum P ower Dissipation ^a
PD
W
Ta=70 C
2
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a R JA
41.5
C /W
1