STA4470 Datasheet, PDF (1/6 Pages) SamHop Microelectronics Corp. – N-Channel Enhancement Mode Field Effect Transistor

Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
STA4470
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
40V
11A
12 @ VGS=10V
16 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
PDIP-8
1
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
I_DM
-Pulsed ^b
TA=25°C
TA=70°C
P_D
Maximum Power Dissipation ^a
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient ^a
Limit
40
±20
11
8.9
55
2.5
1.6
-55 to 150
50
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Aug,18,2008
www.samhop.com.tw