SP3903 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP3903
Ver 1.4
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
22 @ VGS=10V
30V
7.5A
32 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D1 D1 D2 D2
PIN1
PDFN 5x6
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous
I_DM
-Pulsed ^b
TA=25°C
TA=70°C
TC=25°C
TC=100°C
E_AS
Single Pulse Avalanche Energy ^d
TA=25°C
P_D
Maximum Power Dissipation
TA=70°C
TC=25°C
TC=100°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
Limit
30
±20
7.5 ^a
6^a
21.5 ^e
13.6 ^e
31
49
2.5 ^a
1.6 ^a
20.8
8.3
-55 to 150
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
6
R _JA
Thermal Resistance, Junction-to-Ambient ^a
50
Units
V
V
A
A
A
A
A
mJ
W
W
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jul,18,2013
www.samhop.com.tw