SP2112 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

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Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
SP2112
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (mΩ) Max
100V
1.2A
390 @ VGS=10V
430 @ VGS=4.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
D1 D1 D2 D2
DFN 3x3
PIN1
S1 G1 S2 G2
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^{a c}
TA=25°C
T_A=70°C
I_DM
-Pulsed ^c
E_AS
Single Pulse Avalanche Energy ^d
P_D
Maximum Power Dissipation ^a
TA=25°C
T_A=70°C
T_J, T_STG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
100
±20
1.2
1.0
8
0.64
1.47
0.94
-55 to 150
85
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
Details are subject to change without notice.
1
May,07,2014
www.samhop.com.tw