SDUD02N25 Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

Sa mHop Microelectronics C orp.
N-Channel Field Effect Transistor
SDU/D02N25 ^Green
Product
Ver 1.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
250V
2A
3.2 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
G
S
SDU SERIES
TO - 252AA(D-PAK)
G
DS
SDD SERIES
TO - 251(I-PAK)
ABSOLUTE MAXIMUM RATINGS (TA=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous
TA=25°C
TA=70°C
I_DM
-Pulsed ^a
E_AS
Single Pulse Avalanche Energy ^c
P_D
Maximum Power Dissipation
T_A=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JC
Thermal Resistance, Junction-to-Case
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
250
±30
2
1.5
6
10.4
42
27
-55 to 150
3
50
Units
V
V
A
A
A
mJ
W
W
°C
°C/W
°C/W
Details are subject to change without notice.
1
Jun,07,2012
www.samhop.com.tw