SDT02N02 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – S uper high dense cell design for low R DS (ON).

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Product
SDT02N02
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
200V
2A
2.5 @ VGS=10V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
G
S
SOT-223
D
G
S
ABSOLUTE MAXIMUM RATINGS ⁽T_A=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous
TA=25°C
I_DM
-Pulsed ^a
P_D
Maximum Power Dissipation ^a
T_A=25°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R _JA
Thermal Resistance, Junction-to-Ambient
Limit
200
±30
2
13
2.98
-55 to 175
42
Units
V
V
A
A
W
°C
°C/W
Details are subject to change without notice.
1
Jun,07,2012
www.samhop.com.tw