SDS9906 Datasheet, PDF (1/7 Pages) SamHop Microelectronics Corp. – N-Channel E nhancement Mode Field Effect Transistor

S amHop Microelectronics C orp.
S DS 9906
J UL. 30 2004 v1.1
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m ) Max
60 @ VGS = 4V
20V
3.1A
85 @ V G S =2.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S OT-23 package.
S OT-23
D
S
G
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
8
V
Drain C urrent-C ontinuous ^a @ TJ=125 C
ID
-P ulsed ^b
IDM
3.1
A
12
A
Drain-S ource Diode Forward C urrent ^a
IS
1.25
A
Maximum P ower Dissipation ^a
PD
1.25
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R thJA
100
C /W
1