SDP60N03L Datasheet, PDF (1/6 Pages) SamHop Microelectronics Corp. – N-Channel Logic Level E nhancement Mode Field E ffect Transistor

S amHop Microelectronics C orp.
S DP /B 60N03L
May,2004 ver1.1
N-Channel Logic Level E nhancement Mode Field E ffect Transistor
4
P R ODUC T S UMMAR Y
F E AT UR E S
VDS S
30V
ID
R DS (on) ( m W ) Max
11 @ VGS = 10V
56A
19 @ VGS = 4.5V
S uper high dense cell design for extremely low R DS (ON).
High power and current handling capability.
TO-220 & TO-263 package.
D
GS
S DB S E R IE S
T O -263(DD-P AK )
G
D
S
S DP S E R IE S
TO-220
D
G
S
ABS OLUTE MAXIMUM R ATINGS (TC =25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
30
V
Gate-S ource Voltage
VGS
20
V
Drain C urrent-C ontinuous @ TJ=125 C
ID
56
A
a
-P ulsed
IDM
168
A
Drain-S ource Diode Forward C urrent
IS
60
A
Maximum P ower Dissipation _{@ Tc=25 C}
PD
75
W
Operating and S torage Temperature R ange TJ, TS TG
-65 to 175
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-C ase
R JC
2.5
C /W
Thermal R esistance, Junction-to-Ambient
R JA
62.5
C /W
1