SDM8958 Datasheet, PDF (1/9 Pages) SamHop Microelectronics Corp. – Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)

S DM8958
S amHop Microelectronics C orp.
P R E LIMINAR Y
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T S UMMAR Y (N-C hannel)
VDS S
30V
ID
R DS (ON) ( m W ) MAX
32 @ VGS = 10V
7A
50 @ VGS = 4.5V
P R ODUC T S UMMAR Y (P -C hannel)
VDS S
-30V
ID
R DS (ON) ( m W ) MAX
52 @ VGS = -10V
-5A
90 @ VGS = -5V
D1 D1 D2 D2
8
7
6
5
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol N-C hannel P-C hannel Unit
Drain-S ource Voltage
VDS
30
-30
V
Gate-S ource Voltage
VGS
20
20
V
Drain C urrent-C ontinuous ^a @ TJ=125 C
ID
7.0 -5.0
A
-P ulsed ^b
IDM
28
-20
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7 -1.7
A
Maximum P ower Dissipation ^a
PD
2.0
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R qJA
62.5
C /W
1