SDM4952 Datasheet, PDF (1/5 Pages) SamHop Microelectronics Corp. – Dual P -Channel E nhancement Mode F ield E ffect Transistor

S DM4952
S amHop Microelectronics C orp.
March , 2003
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
-20V
ID
-5.3A
R DS (ON) ( m W ) MAX
50 @ VGS = -4.5V
75 @ VGS = -2.7V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
D1 D1 D2 D2
8
7
6
5
S O-8
1
1
2
3
4
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
-20
V
Gate-S ource Voltage
VGS
12
V
Drain C urrent-C ontinuous ^a @ TJ=125 C
ID
-Pulsed^b (300us Pulse Width)
IDM
5.3
A
21
A
Drain-S ource Diode Forward C urrent ^a
IS
2.5
A
Maximum P ower Dissipation ^a
PD
2
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
62.5
C /W
1