SDG8204 Datasheet, PDF (1/5 Pages) SamHop Microelectronics Corp. – Dual N-Channel E nhancement Mode F ield E ffect Transistor

S amHop Microelectronics C orp.
S DG8204
December , 2002
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
ID
R DS (ON) ( m W ) Max
20V
6A
28 @ VGS = 4.0V
34 @ VGS = 2.5V
TS S OP
1
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
D2 S 2 S 2 G2
8
7
6
5
(TOP VIE W)
1
2
3
4
D1 S 1 S 1 G1
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
S ymbol
Limit
Unit
Drain-S ource Voltage
VDS
20
V
Gate-S ource Voltage
VGS
8
V
Drain C urrent-C ontinuous ^a @ TJ=125 C
ID
6.0
A
-Pulsed^b (300us Pulse Width)
IDM
35
A
Drain-S ource Diode Forward C urrent ^a
IS
1.7
A
Maximum P ower Dissipation ^a
PD
1.5
W
Operating Junction and S torage
Temperature R ange
TJ, TSTG
-55 to 150
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient ^a
R JA
85
C /W
1