SDF18N50 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP18N50
SDF18N50
Ver 1.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
500V
18A
0.25 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP18N50HZ
TO-220
SDP18N50PZ
TO-220
SDF18N50HZ
TO-220F
SDF18N50PZ
TO-220F
Marking Code
SDP18N50
18N50
SDF18N50
18N50
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
SDP18N50 SDF18N50
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
500
±30
±30
I_D
Drain Current-Continuous ^a
T_C=25°C
T_C=100°C
18
18
10.8
10.8
I_DM
-Pulsed ^a
72
72
E_AS
Single Pulse Avalanche Energy ^c
990
P_D
Maximum Power Dissipation
T_C=25°C
T_C=100°C
236
38
94
14.1
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R _JC
R _JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
0.53
3.3
°C/W
62.5
62.5
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw