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SDF07N65 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP07N65
SDF07N65
Ver 3.0
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
650V
7A
1.2 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP07N65HZ
TO-220
SDP07N65PZ
TO-220
SDF07N65HZ
TO-220F
SDF07N65PZ
TO-220F
Marking Code
SDP07N65
07N65
SDF07N65
07N65
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP07N65 SDF07N65
VDS
Drain-Source Voltage
VGS
Gate-Source Voltage
650
±30
±30
ID
Drain Current-Continuous a
TC=25°C
TC=70°C
7
7
5.9
5.9
IDM
-Pulsed a
21
21
EAS
Single Pulse Avalanche Energy c
422
PD
Maximum Power Dissipation
TC=25°C
TC=70°C
133
66
93
46
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.1
2.2
°C/W
62.5
62.5
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw