SDF07N50T Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

SDF07N50T
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
Ver 2.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
500V
7A
1.2 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220F Package.
D
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDF07N50PT
TO-220F
Marking Code
07N50T
Delivery Mode
Tube
RoHS Status
Pb Free
ABSOLUTE MAXIMUM RATINGS (T_C=25^°C unless otherwise noted⁾
Symbol Parameter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TC=25°C
TC=100°C
I_DM
-Pulsed ^a
E_AS
Single Pulse Avalanche Energy ^c
P_D
Maximum Power Dissipation
T_C=25°C
T_C=100°C
T_J, T_STG
Operating Junction and Storage
Temperature Range
Limit
500
±30
7.0
4.9
20
225
31
16
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R _JC
R _JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
4.8
°C/W
62.5
°C/W
Details are subject to change without notice.
1
Dec,31,2013
www.samhop.com.tw