SDF05N50 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Super high dense cell design for low RDS(ON).

Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP05N50
SDF05N50
Ver 2.3
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
500V
5A
1.35 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP05N50HZ
TO-220
SDP05N50PZ
TO-220
SDF05N50HZ
TO-220F
SDF05N50PZ
TO-220F
Marking Code
SDP05N50
05N50
SDF05N50
05N50
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
SDP05N50 SDF05N50
V_DS
Drain-Source Voltage
500
V_GS
Gate-Source Voltage
±30
±30
I_D
Drain Current-Continuous ^a
TC=25°C
TC=100°C
5.0
5.0
3.5
3.5
I_DM
-Pulsed ^a
15
15
E_AS
Single Pulse Avalanche Energy ^c
40
P_D
Maximum Power Dissipation
T_C=25°C
T_C=100°C
83
28
42
14
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R _JC
R _JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.8
5.4
°C/W
62.5
62.5
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw