SDF03N80 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Rugged and reliable

Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP03N80
SDF03N80
Ver 1.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Typ
800V
3.0A
3.3 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
Marking Code
Delivery Mode
RoHS Status
SDP03N80HZ
TO-220
SDP03N80
Tube
Halogen Free
SDP03N80PZ
TO-220
03N80
Tube
Pb Free
SDF03N80HZ
TO-220F
SDF03N80
Tube
Halogen Free
SDF03N80PZ
TO-220F
03N80
Tube
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
SDP03N80 SDF03N80
V_DS
Drain-Source Voltage
800
V_GS
Gate-Source Voltage
I_D
Drain Current-Continuous ^a
TC=25°C
TC=70°C
±30
±30
3
3^e
2.5
2.5 ^e
I_DM
-Pulsed ^b
8.9
8.9 ^e
E_AS
Single Pulse Avalanche Energy ^d
100
P_D
a
Maximum Power Dissipation
T_C=25°C
TC=70°C
84
42
58
29
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R _JC
R _JA
Thermal Resistance, Junction-to-Case ^a
Thermal Resistance, Junction-to-Ambient ^a
1.8
3.6
°C/W
62.5
62.5
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw