SDF02N65 Datasheet, PDF (1/11 Pages) SamHop Microelectronics Corp. – Rugged and reliable

Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP02N65
SDF02N65
Ver 2.1
PRODUCT SUMMARY
VDSS
ID
RDS(ON) (Ω) Max
650V
2A
5.6 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP02N65HZ
TO-220
Marking Code
SDP02N65
Delivery Mode
Tube
RoHS Status
Halogen Free
SDP02N65PZ
SDF02N65HZ
SDF02N65PZ
TO-220
TO-220F
TO-220F
02N65
SDF02N65
02N65
Tube
Tube
Tube
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25^°C unless otherwise noted⁾
Symbol Parameter
SDP02N65 SDF02N65
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
650
±30
±30
I_D
Drain Current-Continuous ^a
TC=25°C
TC=100°C
2
2
1.4
1.4
I_DM
-Pulsed ^a
5.9
5.9
E_AS
Single Pulse Avalanche Energy ^c
56
P_D
Maximum Power Dissipation
TC=25°C
T_C=100°C
75
25
37.5
12.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R _JC
R _JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
2
6
°C/W
62.5
62.5
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw