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SC8650 Datasheet, PDF (1/5 Pages) SamHop Microelectronics Corp. – Dual N-Channel Enhancement Mode Field Effect Transistor
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Product
SC8650
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Preliminary
PRODUCT SUMMARY
VSSS
IS
RSS(ON) (mΩ) Typ
2.5 @ VGS=4.5V
2.6 @ VGS=4.0V
12V
18A
2.8 @ VGS=3.8V
3.3 @ VGS=3.1V
4.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
WLCSP
TOP VIEW
1.77 㫧 0.04
BOTTOM VIEW
0.485 0.80
LAND PATTERN (REFERENCE)
0.80
4
3
5
2
φ 0.25
6
1
Mark area
1-pin index mark S1
0.35
0.16 㫧㩷0.01
ABSOLUTE MAXIMUM RATINGS (TA=25°C)
Symbol Parameter
Limit
VSSS
Source-Source Voltage
12
VGSS
Gate-Source Voltage
±8
IS
Source Current-Continuous a
18
ISP
-Pulsed b
100
PT
Total Power Dissipation a
2.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
Details are subject to change without notice.
1
φ 0.25
0.35
Unit : mm
PIN 2
PIN 5
PIN 1,3
PIN 4,6
PIN 1 : Source 1
PIN 2 : Gate 1
PIN 3 : Source 1
PIN 4 : Source 2
PIN 5: Gate 2
PIN 6 : Source 2
Jul,07,2015
www.samhop.com.tw