SC8611 Datasheet, PDF (1/5 Pages) SamHop Microelectronics Corp. – Dual N-Channel Enhancement Mode Field Effect Transistor

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Product
SC8611
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VSSS
IS
RSS(ON) (mΩ) Typ
2.5 @ VGS=4.5V
2.6 @ VGS=4.0V
12V
27A
2.8 @ VGS=3.8V
3.3 @ VGS=3.1V
4.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
WLCSP _{TOP VIEW}
BOTTOM VIEW
1.77
4x 0.25 㫧 0.03
4
3
5
2
6
1
Mark area _{1-pin index mark S1}
3
2x φ 0.25 㫧 0.03
2
1
0.16 㫧㩷0.01
4
5
6
0.25
0.5
ABSOLUTE MAXIMUM RATINGS (T_A=25^°C⁾
Symbol Parameter
Limit
V_SSS
Source-Source Voltage
12
V_GSS
Gate-Source Voltage
±8
I_S
Source Current-Continuous ^a
27
I_SP
-Pulsed ^b
100
P_T
Total Power Dissipation ^a
2.5
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
Details are subject to change without notice.
1
LAND PATTERN (REFERENCE)
2X
0.25
8X
R0.125
PIN 2
Unit : mm
PIN 5
PIN 1,3
PIN 4,6
PIN 1 : Source 1
PIN 2 : Gate 1
PIN 3 : Source 1
PIN 4 : Source 2
PIN 5: Gate 2
PIN 6 : Source 2
Jul,07,2015
www.samhop.com.tw