SC8276 Datasheet, PDF (1/8 Pages) SamHop Microelectronics Corp. – Dual N-Channel Enhancement Mode Field Effect Transistor

Green
Product
SC8276
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 4.1
PRODUCT SUMMARY
VSSS
IS
RSS(ON) (mΩ) Max
12.5 @ VGS=4.5V
13.0 @ VGS=4.0V
24V
8A
13.5 @ VGS=3.8V
18.0 @ VGS=3.1V
23.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Wafer level CSP.
ESD Protected.
TOP VIEW
1.85 㫧 0.03
BOTTOM VIEW
0.65
8276
Date Code
Mark area
1-pin index mark S1
0.210 㫧 0.010
0.107 㫧 0.007
S1
S2
G1
G2
S1
S2
0.65
0.65
S1: Source 1
G1: Gate 1
G2: Gate 2
S2: Source 2
6 - φ 0.31
Unit : mm
ABSOLUTE MAXIMUM RATINGS (T_A=25^°C⁾
Symbol Parameter
Limit
V_SSS
Source-Source Voltage
24
V_GSS
Gate-Source Voltage
±12
I_S
Source Current-Continuous ^a
8
I_SP
-Pulsed ^b
80
P_T
Total Power Dissipation ^a
1.3
T_J, T_STG
Operating Junction and Storage
Temperature Range
-55 to 150
Units
V
V
A
A
W
°C
FET1
Gate 1
FET2
Gate 2
Gate
Protect
Diode
Source 1
Body Diode
Source 2
Details are subject to change without notice.
1
Apr,26,2016
www.samhop.com.tw