HZC Datasheet, PDF (2/6 Pages) Renesas Technology Corp – Silicon Epitaxial Planar Zener Diode for Surge Absorb

HZC Series
Absolute Maximum Ratings
tem
Power dissipation
Junction temperature
Storage temperature
Note: See Fig2.
Symbol
Pd *
Tj
Tstg
Value
150
150
−55 to +150
(Ta = 25°C)
Unit
mW
°C
°C
Electrical Characteristics
Zener Voltage
Reverse Current Dynamic Resistance
Type No.
VZ (V) *¹
Min
Max
Test
Condition
IZ (mA)
IR (µA)
Max
Test
Condition
VR (V)
rd (Ω)
Max
Test
Condition
IZ (mA)
HZC2.0
1.90
2.20
5
120.0
0.5
100
5
HZC2.2
2.10
2.40
5
120.0
0.7
100
5
HZC2.4
2.30
2.60
5
120.0
1.0
100
5
HZC2.7
2.50
2.90
5
120.0
1.0
110
5
HZC3.0
2.80
3.20
5
50.0
1.0
120
5
HZC3.3
3.10
3.50
5
20.0
1.0
130
5
HZC3.6
3.40
3.80
5
10.0
1.0
130
5
HZC3.9
3.70
4.10
5
10.0
1.0
130
5
HZC4.3
4.01
4.48
5
10.0
1.0
130
5
HZC4.7
4.42
4.90
5
10.0
1.0
130
5
HZC5.1
4.84
5.37
5
5.0
1.5
130
5
HZC5.6
5.31
5.92
5
5.0
2.5
80
5
HZC6.2
5.86
6.53
5
2.0
3.0
50
5
HZC6.8
6.47
7.14
5
1.0
3.5
30
5
HZC7.5
7.06
7.84
5
1.0
4.0
30
5
HZC8.2
7.76
8.64
5
0.5
5.0
30
5
HZC9.1
8.56
9.55
5
0.5
6.0
30
5
HZC10
9.45
10.55
5
0.5
7.0
30
5
HZC11
10.44
11.56
5
0.5
8.0
30
5
HZC12
11.42
12.60
5
0.5
9.0
35
5
HZC13
12.47
13.96
5
0.5
10.0
35
5
HZC15
13.84
15.52
5
0.5
11.0
40
5
HZC16
15.37
17.09
5
0.5
12.0
40
5
HZC18
16.94
19.03
5
0.5
13.0
45
5
HZC20
18.86
21.08
5
0.5
15.0
50
5
HZC22
20.88
23.17
5
0.5
17.0
55
5
HZC24
22.93
25.57
5
0.5
19.0
60
5
HZC27
25.10
28.90
2
0.5
21.0
70
2
HZC30
28.00
32.00
2
0.5
23.0
80
2
HZC33
31.00
35.00
2
0.5
25.0
80
2
HZC36
34.00
38.00
2
0.5
27.0
90
2
Notes: 1. Tested with pulse (Pw = 40 ms).
2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse
Failure criterion ; According to IR spec
(Ta = 25°C)
ESD-Capability *²
— (kV) *²
Min
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
30
25
20
Rev.2.00 Jul 04, 2005 page 2 of 5