RU75210R Datasheet, PDF (5/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU75210R
Typical Characteristics
Output Characteristics
300
250
Vgs=8,9,10V
200
6V
150
5V
100
50
3V
0
0.0
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-Source Voltage (V)
Drain-Source On Resistance
2.5
V_GS=10V
I_D=75A
2.0
1.5
1.0
0.5
T_J=25°C
Rds(on)=3.5mΩ
0.0
-50 -25 0 25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Capacitance
10000
9000
Frequency=1.0MHz
8000
7000
6000
Ciss
5000
4000
3000
2000
Coss
1000 _Crs
0
s
1
10
100
V_DS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2014
5
Drain-Source On Resistance
10
8
6
4
V_GS=10V
2
0
0
100
10
20
40
60
80
100
I_D - Drain Current (A)
Source-Drain Diode Forward
T_J=175°C
T_J=25°C
1
0.1
0.2 0.4 0.6 0.8
1
1.2 1.4
V_SD - Source-Drain Voltage (V)
Gate Charge
10
9 ^VDS^=60V
8 ^IDS=75A
7
6
5
4
3
2
1
0
0
20
40
60
80
100
Q_G - Gate Charge (nC)
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