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| RU30L15H Datasheet, PDF (5/9 Pages) Ruichips Semiconductor Co., Ltd – P-Channel Advanced Power MOSFET | |||
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Typical Characteristics
Drain-Source On Resistance
RU30L15H
Source-Drain Diode Forward
Tj - Junction Temperature (°C)
Capacitance
-VSD - Source-Drain Voltage (V)
Gate Charge
-VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
5
Rev. Bâ APR., 2011
QG - Gate Charge (nC)
www.ruichips.com
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