RU3070L Datasheet, PDF (5/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU3070L
Typical Characteristics
Output Characteristics
250
8,9,10V
5V
200
4V
150
100
3V
50
2V
0
0
1
2
3
4
5
V_DS - Drain-Source Voltage (V)
Drain-Source On Resistance
2.5
V_GS=10V
I_DS=70A
2.0
1.5
1.0
0.5
T_J=25°C
Rds(on)=3.3mΩ
0.0
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
Capacitance
3000
2700
2400
Frequency=1.0MHz
2100
1800
Ciss
1500
1200
900
600
Coss
300
Crss
0
1
10
100
V_DS - Drain-Source Voltage (V)
Ruichips Semiconductor Co., Ltd
Rev. A– JUL., 2013
5
Drain-Source On Resistance
15
12
9
4.5V
6
3
0
0
100
10V
20
40
60
80
100 120
I_D - Drain Current (A)
Source-Drain Diode Forward
10
T_J=150°C
1
T_J=25°C
0.1
0.01
0.2 0.4 0.6 0.8
1
1.2 1.4
V_SD - Source-Drain Voltage (V)
10
9 ^VDS=24V
IDS=70A
8
Gate Charge
7
6
5
4
3
2
1
0
0
10
20
30
40
Q_G - Gate Charge (nC)
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