RU20E60L Datasheet, PDF (4/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

℃
RU20E60L
Typical Characteristics
Power Dissipation
60
50
40
30
20
10
0
0
25 50 75 100 125 150 175
T_J - Junction Temperature (°C)
Safe Operation Area
100
10µs
10
100µs
1ms
DC
10ms
1
0.1
T_C=25°C
0.01
0.01
0.1
1
10
100
V_DS - Drain-Source Voltage (V)
Drain Current
70
60
50
40
30
20
10
VGS=4.5V
0
25
50
75
100 125 150 175
T_J - Junction Temperature (°C)
Drain Current
20
Ids=30A
15
10
5
0
0 1 2 3 4 5 6 7 8 9 10
V_GS - Gate-Source Voltage (V)
Thermal Transient Impedance
Duty=0.5, 0.2, 0.1, 0.05, 0.02, 0.01, Single Pulse
10
1
0.1
0.01
1E-05
Single Pulse
0.0001
0.001
0.01
0.1
Square Wave Pulse Duration (sec)
R_θJC=2.9°C/W
1
Ruichips Semiconductor Co., Ltd
Rev. B– MAR., 2013
4
www.ruichips.com