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| RU5H18Q Datasheet, PDF (3/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET Gate charge minimized | |||
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Typical Characteristics
Power Dissipation
RU5H18Q
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
Tj - Junction Temperature (°C)
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
3
Rev. A â MAY., 2012
Square Wave Pulse Duration (sec)
www.ruichips.com
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