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| RU30E40L Datasheet, PDF (3/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET Super High Dense Cell Design | |||
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Typical Characteristics
Power Dissipation
RU30E40L
Drain Current
Tj - Junction Temperature (°C)
Safe Operation Area
Tj - Junction Temperature (°C)
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright© Ruichips Semiconductor Co., Ltd
3
Rev. Aâ JUN., 2012
Square Wave Pulse Duration (sec)
www.ruichips.com
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