RU75170R Datasheet, PDF (2/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU75170R
Electrical Characteristics (T_C=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU75170R
Unit
Min. Typ. Max.
Static Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS=0V, I_DS=250µA
75
I_DSS Zero Gate Voltage Drain Current ^{VDS= 75V, VGS=0V}
T_J=85°C
V_GS(th) Gate Threshold Voltage
V_DS=V_GS, I_DS=250µA
2
I_GSS Gate Leakage Current
V_GS=±25V, V_DS=0V
④
R_DS(ON)
Drain-Source On-state Resistance
V_GS= 10V, I_DS=75A
V
1
µA
30
3
4
V
±100 nA
5
6 mΩ
Diode Characteristics
④
V_SD ^{Diode Forward Voltage}
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
⑤
Dynamic Characteristics
R_G Gate Resistance
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
t_d(ON) Turn-on Delay Time
t_r Turn-on Rise Time
t_d(OFF) Turn-off Delay Time
t_f Turn-off Fall Time
⑤
Gate Charge Characteristics
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
I_SD=75A, V_GS=0V
ISD=75A, dlSD/dt=100A/µs
V_GS=0V,V_DS=0V,F=1MHz
VGS=0V,
VDS=37.5V,
Frequency=1.0MHz
VDD=37.5V, RL=0.5Ω,
IDS=75A, VGEN= 10V,
RG=3.75Ω
VDS=60V, VGS= 10V,
IDS=75A
1.2 V
42
ns
64
nC
1.4
Ω
7200
700
pF
460
26
96
ns
72
66
145
42
nC
54
Notes:
Calculated continuous current based on maximum allowable junction temperature. Package limitation
current is 75A.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =56A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
2
Rev. A– MAR., 2012
www.ruichips.com