RU70E15L Datasheet, PDF (2/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU70E15L
Electrical Characteristics (T_C=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU70E15L
Unit
Min. Typ. Max.
Static Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS=0V, I_DS=250µA
70
V
I_DSS Zero Gate Voltage Drain Current ^{VDS= 70V, VGS=0V}
T_J=85°C
1
µA
30
V_GS(th) Gate Threshold Voltage
V_DS=V_GS, I_DS=250µA
1.5 2 2.7 V
I_GSS Gate Leakage Current
V_GS=±16V, V_DS=0V
±10 µA
④
R_DS(ON)
Drain-Source On-state Resistance
V_GS= 10V, I_DS=7.5A
V_GS= 4.5V, I_DS=5A
90 105 mΩ
100 125 mΩ
Diode Characteristics
④
V_SD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
⑤
Dynamic Characteristics
R_G Gate Resistance
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
t_d(ON) Turn-on Delay Time
t_r Turn-on Rise Time
t_d(OFF) Turn-off Delay Time
t_f Turn-off Fall Time
⑤
Gate Charge Characteristics
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
I_SD=7.5A, V_GS=0V
ISD=7.5A, dlSD/dt=100A/µs
V_GS=0V,V_DS=0V,F=1MHz
VGS=0V,
VDS= 35V,
Frequency=1.0MHz
VDD=35V, RL=4.7Ω,
IDS=7.5A, VGEN= 10V,
RG=6Ω
VDS=56V, VGS= 10V,
IDS=7.5A
1.2 V
39
ns
66
nC
1.3
Ω
480
70
pF
40
14
19
ns
32
15
14 18
3
nC
5
Notes:
Pulse width limited by safe operating area.
Calculated continuous current based on maximum allowable junction temperature.
Limited by TJmax, IAS =7A, VDD = 48V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
2
Rev. B– JUN., 2011
www.ruichips.com