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| RU60E5H Datasheet, PDF (2/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU60E5H
Electrical Characteristics (TA=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU60E5H
Unit
Min. Typ. Max.
Static Characteristics
BVDSS Drain-Source Breakdown Voltage VGS=0V, IDS=250µA
60
V
IDSS Zero Gate Voltage Drain Current VDS= 60V, VGS=0V
TJ=85°C
1
µA
30
VGS(th) Gate Threshold Voltage
VDS=VGS, IDS=250µA
1.5 2 2.7 V
IGSS Gate Leakage Current
VGS=±16V, VDS=0V
±10 µA
â¢
RDS(ON)
Drain-Source On-state Resistance
VGS= 10V, IDS=5A
VGS= 4.5V, IDS=3.5A
60 70 mâ¦
70 80 mâ¦
Diode Characteristics
â¢
VSD
Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
â£
Dynamic Characteristics
RG Gate Resistance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
â£
Gate Charge Characteristics
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
ISD=2.5A, VGS=0V
ISD=2.5A, dlSD/dt=100A/µs
VGS=0V,VDS=0V,F=1MHz
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
VDD=30V, RL=12â¦,
IDS=2.5A, VGEN= 10V,
RG=6â¦
VDS=48V, VGS= 10V,
IDS=2.5A
1.2 V
41
ns
71
nC
0.7
â¦
460
44
pF
24
3
4
ns
12
5
16 21
3
nC
5
Notes:
Pulse width limited by safe operating area.
â¡When mounted on 1 inch square copper board, t â¤10sec.
Pulse test ; Pulse widthâ¤300µs, duty cycleâ¤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
2
Rev. Aâ JUL., 2011
www.ruichips.com
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