RU2H15S Datasheet, PDF (2/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU2H15S
Electrical Characteristics (T_C=25°C Unless Otherwise Noted)
Symbol
Parameter
Test Condition
RU2H15S
Unit
Min. Typ. Max.
Static Characteristics
BV_DSS Drain-Source Breakdown Voltage V_GS=0V, I_DS=250µA
200
I_DSS Zero Gate Voltage Drain Current ^{VDS=200V, VGS=0V}
T_J=85°C
V_GS(th) Gate Threshold Voltage
V_DS=V_GS, I_DS=250µA
2
I_GSS Gate Leakage Current
V_GS=±20V, V_DS=0V
④
R_DS(ON)
Drain-Source On-state Resistance
V_GS=10V, I_DS=8A
V
1
µA
30
3
4
V
±100 nA
200 250 mΩ
Diode Characteristics
④
V_SD ^{Diode Forward Voltage}
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
⑤
Dynamic Characteristics
R_G Gate Resistance
C_iss Input Capacitance
C_oss Output Capacitance
C_rss Reverse Transfer Capacitance
t_d(ON) Turn-on Delay Time
t_r Turn-on Rise Time
t_d(OFF) Turn-off Delay Time
t_f Turn-off Fall Time
⑤
Gate Charge Characteristics
Q_g Total Gate Charge
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
I_SD=15A, V_GS=0V
ISD=15A, dlSD/dt=100A/µs
V_GS=0V,V_DS=0V,F=1MHz
VGS=0V,
VDS=100V,
Frequency=1.0MHz
VDD=100V, RL=6.7Ω,
IDS=15A, VGEN=10V,
RG=4.7Ω
VDS=160V, VGS=10V,
IDS=15A
1.3 V
107
ns
542
nC
5.6
Ω
670
115
pF
40
10
26
ns
31
13
33
9
nC
15
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Pulse width limited by safe operating area.
Limited by TJmax, IAS =3A, VDD = 60V, RG = 50Ω , Starting TJ = 25°C.
Pulse test ; Pulse width≤300µs, duty cycle≤2%.
Guaranteed by design, not subject to production testing.
Copyright© Ruichips Semiconductor Co., Ltd
2
Rev. A– DEC., 2011
www.ruichips.com