RUS5010M6 Datasheet, PDF (1/6 Pages) Ruichips Semiconductor Co., Ltd – High Efficiency Barrier Rectifier

Features
• V_RRM= 50V
I_F(AV)= 10A
• HEBR^® Technology
• Ultra-Low Forward Voltage Drop
• Low Power Loss and High Efficiency
• High Surge Capability
• Low Leakage Current
• Lead Free and Green Devices Available
Applications
• Rectifiers in SMPS
• Free Wheeling Diode
• DC-DC Converters
RUS5010M6
High Efficiency Barrier Rectifier
Pin Description
3
3
1
2
2
1
PDFN4053
1
3
2
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_A=25°C Unless Otherwise Noted)
V_RRM^①
V_R^①
V_R(RMS)^①
I_F(AV)
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
RMS Reverse Voltage
Average Rectified Forward Current, T_C=130°C
I_FSM
Peak Forward Surge Current,8.3ms Half Sine Wave
T_STG
Storage Temperature Range
T_J
Operating Junction Temperature Range
Mounted on Large Heat Sink
R_θJC
R_θJA^②
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
High Efficiency Barrier Rectifier
Rating
Unit
50
V
50
V
35
V
10
A
250
A
-55 to 150 °C
-55 to 150 °C
2.1
°C/W
35
°C/W
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
1
www.ruichips.com