|
RUS1H21R Datasheet, PDF (1/6 Pages) Ruichips Semiconductor Co., Ltd – Power Schottky Barrier Diode | |||
|
Features
⢠VRRM= 100V
IF(AV)=2x 10A
⢠Low Power Loss and High Efficiency
⢠High Surge Capability
⢠Low Leakage Current
⢠Low Forward Voltage Drop
⢠Lead Free and Green Devices Available
Applications
⢠Rectifiers in SMPS
⢠Free Wheeling Diode
⢠DC-DC Converters
RUS1H21R
Power Schottky Barrier Diode
Pin Description
TO220
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VRRM
VR
Maximum Repetitive Reverse Voltage
Maximum DC Reverse Voltage
IF(AV)
per Device
Average Rectified Forward Current, TC=130°C
per Diode
IFSM
TSTG
TJ
Peak Forward Surge Current,8.3ms Half Sine Wave
Storage Temperature Range
Operating Junction Temperature
Mounted on Large Heat Sink
RθJC
Thermal Resistance-Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
Schottky Barrier Diode
Rating
Unit
100
V
100
V
20
A
10
A
150
A
-55 to 150 °C
150
°C
1.8
°C/W
62.5
°C/W
Ruichips Semiconductor Co., Ltd
Rev. Bâ JAN., 2013
1
www.ruichips.com
|
▷ |