RUD2H20Q2 Datasheet, PDF (1/5 Pages) Ruichips Semiconductor Co., Ltd – Ultral Fast Recovery Diode

RUD2H20Q2
Ultral Fast Recovery Diode
MOSFET
Features
• V_RRM= 200V
I_F(AV)=2x 10A
• Ultra Fast Recovery Time
• High Surge Capability
• Low Leakage Current
• Low Forward Voltage Drop
• Avalanche Rated
• Lead Free and Green Devices Available
Pin Description
TO-3P
Applications
• High Speed Power Switching
Fast Recovery Diode
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
V_RRM
Maximum Repetitive Reverse Voltage
V_R
Maximum DC Reverse Voltage
I_F(AV)
Average Rectified Forward Current,per ^Device
T_C=130°C
per Diode
I_FSM
T_STG
Peak Forward Surge Current,10mS Half Sine Wave
Storage Temperature Range
T_J
Operating Junction Temperature
Mounted on Large Heat Sink
R_θJC
Thermal Resistance-Junction to Case per Diode
Avalanche Ratings
①
E_AS
Avalanche Energy, Single Pulsed
Rating
200
200
20
10
100
-55 to 150
150
1.5
64
Unit
V
A
A
A
°C
°C
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. A– SEP., 2012
www.ruichips.com