RU80N15S Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

Features
• 150V/80A,
R_{DS (ON)} =31mΩ(Typ.)@V_GS=10V
• Avalanche Rated
• Reliable and Rugged
• Lead Free and Green Devices Available
RU80N15S
N-Channel Advanced Power MOSFET
Pin Description
D
Applications
• Automotive applications and a wide variety of other applications
• High Efficiency Synchronous in SMPS
• High Speed Power Switching
G
S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
E_AS^③
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
T_C=25°C
150
V
±25
175
°C
-55 to 175 °C
80
A
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
300
A
80
A
60
176
W
88
0.85
°C/W
62.5
°C/W
169
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– APR., 2013
1
www.ruichips.com