RU80100S Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

Features
• 80V/100A,
R_{DS (ON)} =5.5mΩ (Typ.) @ V_GS=10V
• Ultra Low On-Resistance
• Exceptional dv/dt capability
• Fast Switching and Fully Avalanche Rated
• 100% avalanche tested
• 175°C Operating Temperature
• Lead Free and Green Available
Applications
• High Current Switching Applications
• Inverter Systems
RU80100S
N-Channel Advanced Power MOSFET
Pin Description
D
G
S
TO263
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
E_AS^③
Avalanche Energy, Single Pulsed
S
N-Channel MOSFET
Rating
Unit
T_C=25°C
80
V
±25
175
°C
-55 to 175 °C
100
A
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
400
A
100
A
71
188
W
94
0.8
°C/W
62.5
°C/W
225
mJ
Ruichips Semiconductor Co., Ltd
Rev. A– DEC., 2013
1
www.ruichips.com