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RU7H2K Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU7H2K
N-Channel Advanced Power MOSFET
Features
⢠700V/2A,
RDS (ON) =5000mΩ(Typ.)@VGS=10V
⢠Super High Dense Cell Design
⢠Fast Switching
⢠100% avalanche tested
⢠Lead Free and Green Devices Available (RoHS Compliant)
Pin Description
Applications
⢠High efficiency switch mode power supplies
TO251
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDPâ
300μs Pulse Drain Current Tested
IDâ¡
Continuous Drain Current(VGS=10V)
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
RθJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
EASâ¢
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. Aâ JAN., 2013
1
N-Channel MOSFET
Rating
Unit
TC=25°C
700
V
±30
150
°C
-55 to 150 °C
2
A
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
8
A
2
A
1.3
56
W
22
2.2
°C/W
100
°C/W
5
mJ
www.ruichips.com
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