RU6H2L Datasheet, PDF (1/8 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU6H2L
N-Channel Advanced Power MOSFET
Features
• 600V/2A,
R_{DS (ON)} =4000mΩ(Typ.)@V_GS=10V
• Gate charge minimized
• Low Crss( Typ. 5pF)
• Extremely high dv/dt capability
• 100% avalanche tested
• Lead Free and Green Devices Available (RoHS Compliant)
Applications
• High efficiency switch mode power supplies
• Lighting
Pin Description
D
G
S
TO252
D
G
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (T_C=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP^①
300μs Pulse Drain Current Tested
I_D^②
Continuous Drain Current(V_GS=10V)
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
R_θJA
Thermal Resistance-Junction to Ambient
Drain-Source Avalanche Ratings
E_AS^③
Avalanche Energy, Single Pulsed
Ruichips Semiconductor Co., Ltd
Rev. A– MAR., 2013
1
S
N-Channel MOSFET
Rating
Unit
T_C=25°C
600
V
±30
150
°C
-55 to 150 °C
2
A
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
8
A
2
A
1.2
56
W
22
2.2
°C/W
100
°C/W
34
mJ
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