RU6H10P Datasheet, PDF (1/11 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET

RU6H10P
N-Channel Advanced Power MOSFET
MOSFET
Features
• 600V/10A,
RDS (ON) =0.65Ω (Type) @ VGS=10V
• Gate charge minimized
• Low Crss( Typ. 15pF)
• Extremely high dv/dt capability
• 100% avalanche tested
• Lead Free and Green Available
Pin Description
TO-220
TO-263
TO-220F
TO-247
Applications
• High efficiency switch mode power
supplies
• Electronic lamp ballasts based on half
bridge
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
V_DSS
Drain-Source Voltage
V_GSS
Gate-Source Voltage
T_J
Maximum Junction Temperature
T_STG
Storage Temperature Range
I_S
Diode Continuous Forward Current
Mounted on Large Heat Sink
I_DP
300μs Pulse Drain Current Tested
I_D
Continuous Drain Current
P_D
Maximum Power Dissipation
R_θJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
②
E_AS
Avalanche Energy, Single Pulsed
T_C=25°C
T_C=25°C
T_C=25°C
T_C=100°C
T_C=25°C
T_C=100°C
Rating
600
±30
150
-55 to 150
10
①
40
①
10
①
7
35
14
3.6
450
Unit
V
°C
°C
A
A
A
W
°C/W
mJ
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
www.ruichips.com