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RU6888S Datasheet, PDF (1/9 Pages) Ruichips Semiconductor Co., Ltd – N-Channel Advanced Power MOSFET | |||
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RU6888S
N-Channel Advanced Power MOSFET
MOSFET
Features
⢠68V/88A,
RDS (ON) =6m⦠(Typ.) @ VGS=10V
⢠Ultra Low On-Resistance
⢠Exceptional dv/dt capability
⢠Fast Switching and Fully Avalanche Rated
⢠100% avalanche tested
⢠175°C Operating Temperature
⢠Lead Free and Green Available
Applications
⢠Switching Application Systems
⢠Inverter Systems
Pin Description
TO-263
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
VGSS
Gate-Source Voltage
TJ
Maximum Junction Temperature
TSTG
Storage Temperature Range
IS
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current(VGS=10V)
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
Drain-Source Avalanche Ratings
â¢
EAS
Avalanche Energy, Single Pulsed
TC=25°C
TC=25°C
TC=25°C
TC=100°C
TC=25°C
TC=100°C
Copyright© Ruichips Semiconductor Co., Ltd
Rev. B â NOV., 2012
Rating
68
±25
175
-55 to 175
â
88
â¡
320
â
88
65
120
60
1.25
Unit
V
°C
°C
A
A
A
W
°C/W
225
mJ
www.ruichips.com
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